Voltage Dependence of Supercapacitor Capacitance

Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET

Capacitance between terminals of a power semiconductor device substantially affects on its switching operation. This paper presents a capacitance–voltage (C–V) characterization system for measuring high voltage SiC–JFET and the results. The C–V characterization system enables one to impose high drain-source voltage to the device and extracts the capacitance between two of three terminals in FET...

Anomalous Scaling Exponents of Capacitance –Voltage Characteristics

Capacitance-Voltage (CV) measurements along with the Mott-Schottky (MS) analysis are widely used for characterization of material and device parameters. Using a simple analytical model, supported by detailed numerical simulations, here we predict that the capacitance of thin film devices scale as V (V is the applied potential), instead of the often used V dependence of MS analysis – with signif...

Capacitance-Voltage Characterization of GaAs-Oxide Interfaces

Voltage Fluctuation in a Supercapacitor During a High-g Impact

Supercapacitors (SCs) are a type of energy storage device with high power density and long lifecycles. They have widespread applications, such as powering electric vehicles and micro scale devices. Working stability is one of the most important properties of SCs, and it is of significant importance to investigate the operational characteristics of SCs working under extreme conditions, particula...

Gap Junction Voltage Dependence

All vertebrate gap junction channels display voltage-dependent gating. Historically, voltage-dependent behaviors have been characterized as being transjunctional voltage (Vj) and membrane voltage (Vm) dependent. The transjunctional voltage dependence of gap junction channels composed of two identical hemichan-nels, each composed of identical connexins subunits (a homotypic channel) is usually s...